Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion-Reference-Cited by-同舟云学术

Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion

Published:2016-11-11 Issue:3 Volume:214 Page:1600562
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Sun Ruize¹²,Liang Yung C.¹²,Yeo Yee-Chia¹,Wang Yun-Hsiang¹,Zhao Cezhou³

Affiliation:

1. Department of Electrical and Computer Engineering; National University of Singapore; Singapore 117580 Singapore

2. National University of Singapore (Suzhou) Research Institute; Suzhou 215123 P.R. China

3. Department of Electrical and Electronic Engineering; Xi'an Jiaotong-Liverpool University; Suzhou, Jiangsu 215123 P.R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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2. Gallium nitride devices for power electronic applications;Baliga;Semicond. Sci. Technol,2013

3. Gallium nitride based power switches for next generation of power conversion;Chowdhury;Phys. Status Solidi A,2015

4. A 120-W boost converter operation using a high-voltage GaN-HEMT;Saito;IEEE Electron Device Lett,2008

5. B. Hughes Y. Y. Yoon D. M. Zehnder K. S. Boutros 2011

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