Growing bulk-like 3C-SiC from seeding material produced by CVD-Reference-Cited by-同舟云学术

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Growing bulk-like 3C-SiC from seeding material produced by CVD

Published:2017-02-28 Issue:4 Volume:214 Page:1600429
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Schuh P.¹,Arzig M.¹,Litrico G.²³,La Via F.³,Mauceri M.⁴,Wellmann P. J.¹

Affiliation:

1. Crystal Growth Lab, Materials Department 6 (i-meet); FAU Erlangen-Nürnberg; Martensstr. 7 D-91058 Erlangen Germany

2. Laboratori Nazionali del Sud; via S. Sofia 62 95123 Catania Italy

3. IMM-CNR; VIII Strada 5 95121 Catania Italy

4. E.T.C. Epitaxial Technology Center; 16a strada − Pantano d'Arci 95121 Catania Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600429/fullpdf

Reference13 articles.

1. Semiconductors: Data Handbook

2. B. W. Frazier 175 287 1893

3. B. S. Richards A. Lambertz R. P. Corkish C. A. Zorman M. Mehregany M. Ionescu M.A. Green rd 2003

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05

2. Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2 O3 , and Diamond;Zeitschrift für anorganische und allgemeine Chemie;2017-10-20

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