Role of Impurities in Silicon Solidification and Electrical Properties Studied by Complementary In Situ and Ex Situ Methods-Reference-Cited by-同舟云学术

Role of Impurities in Silicon Solidification and Electrical Properties Studied by Complementary In Situ and Ex Situ Methods

Published:2019-08-02 Issue:17 Volume:216 Page:1900298
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ouaddah Hadjer¹,Périchaud Isabelle¹,Barakel Damien¹,Palais Olivier¹,Di Sabatino Marisa²,Reinhart Guillaume¹,Regula Gabrielle¹,Mangelinck-Noël Nathalie¹^ORCID

Affiliation:

1. Aix Marseille UniversityUniversité de ToulonCNRS, IM2NP Campus de Saint Jérôme, Case 142 13397 Marseille Cedex 20 France

2. Department of Materials Science and EngineeringNTNU NO-7491 Trondheim Norway

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900298

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3. Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells

4. Study of evolution of dislocation clusters in high performance multicrystalline silicon

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