Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes-Reference-Cited by-同舟云学术

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Published:2015-12-09 Issue:4 Volume:213 Page:925-929
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kleinow P.¹,Rutz F.¹,Aidam R.¹,Bronner W.¹,Heussen H.¹,Walther M.¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72; 79108 Freiburg Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532556/fullpdf

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