Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes-Reference-Cited by-同舟云学术

Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes

Published:2015-01-14 Issue:5 Volume:212 Page:1158-1161
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kang He¹,Wang Quan²,Xiao Hongling¹,Wang Cuimei¹,Jiang Lijuan¹,Feng Chun¹,Chen Hong¹,Yin Haibo¹,Qu Shenqi¹,Peng Enchao¹,Gong Jiamin²,Wang Xiaoliang¹³,Li Baiquan⁴,Wang Zhanguo¹,Hou Xun³

Affiliation:

1. Key Laboratory of Semiconductor Materials Science; Institute of Semiconductors; Chinese Academy of Sciences; Beijing 100083 P.R. China

2. School of Electronic Engineering; Xi′an University of Posts & Telecommunications; Xi′an P.R. China

3. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics; Beijing 100083 P.R. China

4. Beijing Huajin Chuangwei Technology Co., Ltd.; Beijing P.R. China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Megawatt solid-state electronics

2. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

3. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias

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