Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor-Reference-Cited by-同舟云学术

Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

Published:2017-07-27 Issue:10 Volume:214 Page:1700277
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wang Fang¹,Li Bo²,Xu Baolei²,Liu Longfei³,Ou Yun¹,Tian Li³,Wang Wei⁴

Affiliation:

1. Hunan Provincial Key Laboratory of Health Maintenance for Mechanical Equipment; Hunan University of Science and Technology; Hunan Xiangtan 411201 P.R. China

2. School of Materials Science and Engineering; Xiangtan University; Hunan Xiangtan 411105 P.R. China

3. School of Materials Science and Engineering; Hunan University of Science and Technology; Hunan Xiangtan 411201 P.R. China

4. China Three Gorges Corporation; Chengdu Sichuan 610041 P.R. China

Funder

National Natural Science Foundation of China

Hunan Provincial Department of Education

Program for New Century Excellent Talents in University

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

2. Ferroelectric Memories

3. Fatigue-free ferroelectric capacitors with platinum electrodes

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. Physics of the ferroelectric nonvolatile memory field effect transistor

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