In Situ Ellipsometry Study of the Early Stage of ZnO Atomic Layer Deposition on In 0.53 Ga 0.47 As-Reference-Cited by-同舟云学术

In Situ Ellipsometry Study of the Early Stage of ZnO Atomic Layer Deposition on In 0.53 Ga 0.47 As

Published:2020-01-14 Issue:8 Volume:217 Page:1900831
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Skopin Evgeniy V.¹,Deschanvres Jean-Luc¹,Renevier Hubert¹^ORCID

Affiliation:

1. CNRSInstitute of Engineering University of Grenoble Alpes (Grenoble-INP)LMGPUniversity of Grenoble Alpes 38000 Grenoble France

Funder

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900831

Reference38 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Theoretical gain of strained quantum well grown on an InGaAs ternary substrate

3. Optical energy gap variation in GaxIn1−x As alloys

4. Preparation and Properties of Bulk In[sub 1−x]Ga[sub x]As Alloys

5. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

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