Superior electronic passivation of n-GaP(100) surface using alcoholic as compared to aqueous ammonium sulfide solution: Wet processing studied with synchrotron photoelectron spectroscopy-Reference-Cited by-同舟云学术

Superior electronic passivation of n-GaP(100) surface using alcoholic as compared to aqueous ammonium sulfide solution: Wet processing studied with synchrotron photoelectron spectroscopy

Published:2014-02-12 Issue:9 Volume:211 Page:2005-2012
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lebedev Mikhail V.¹,Mayer Thomas²

Affiliation:

1. A. F. Ioffe Physical-Technical Institute; Russian Academy of Sciences; Politekhnicheskaya 26 194021 St. Petersburg Russia

2. Institute of Material Science; Darmstadt University of Technology; Petersenstraße 32 64287 Darmstadt Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Green Electroluminescence from Gallium Phosphide Diodes near Room Temperature

2. Semiconductor near-ultraviolet photoelectronics

3. Photoassisted Electrolysis of Water by Visible Irradiation of a p -Type Gallium Phosphide Electrode

4. Solar Hydrogen Generation with Wide-Band-Gap Semiconductors: GaP(100) Photoelectrodes and Surface Modification

5. Dye-Sensitized Photocathodes: Efficient Light-Stimulated Hole Injection into p-GaP Under Depletion Conditions

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