Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures-Reference-Cited by-同舟云学术

Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures

Published:2017-01-25 Issue:2 Volume:214 Page:1600470
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Niang Kham M.¹,Cho Junhee¹,Sadhanala Aditya²,Milne William I.¹,Friend Richard H.²,Flewitt Andrew J.¹

Affiliation:

1. Electrical Engineering Division, Department of Engineering; University of Cambridge; 9 JJ Thomson Avenue Cambridge CB3 0FA UK

2. Department of Physics; University of Cambridge; 19 JJ Thomson Avenue Cambridge CB3 0HE UK

Funder

Engineering and Physical Sciences Research Council

India-UK APEX

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

3. An Indium-Free Anode for Large-Area Flexible OLEDs: Defect-Free Transparent Conductive Zinc Tin Oxide

4. Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

5. Zinc tin oxide thin film transistor sensor

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