Simulation of Structure Parameters' Influence on the Threshold Voltage of Normally‐Off p‐GaN/AlGaN/GaN Transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Simulation of Structure Parameters' Influence on the Threshold Voltage of Normally‐Off p‐GaN/AlGaN/GaN Transistors

Published:2019-09-29 Issue:22 Volume:216 Page:1900453
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Osvald Jozef¹^ORCID

Affiliation:

1. Institute of Electrical EngineeringSlovak Academy of Sciences Dúbravská cesta 9 Bratislava 84104 Slovakia

Funder

Vedecká Grantová Agentúra MŠVVaŠ SR a SAV

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900453

Reference17 articles.

1. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

2. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

3. Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

4. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

5. Review of technology for normally-off HEMTs with p-GaN gate

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low R _ON,sp;IEEE Transactions on Electron Devices;2022-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP