Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF4plasma treatment-Reference-Cited by-同舟云学术

Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF4plasma treatment

Published:2015-01-14 Issue:5 Volume:212 Page:1170-1173
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Park Youngrak¹,Kim Jungjin¹,Chang Woojin¹,Jung Dongyun¹,Bae Sungbum¹,Mun Jaekyung¹²,Jun Chi-Hoon¹,Ko Sangchoon¹,Nam Eunsoo¹

Affiliation:

1. GaN Power Electronics Research Section; Electronics and Telecommunications Research Institute (ETRI); 218 Gajeong-ro Yuseong-gu Daejeon 305-700 Korea

2. Department of Advanced Device Engineering; University of Science and Technology; 217 Gajeong-ro Yuseong-gu Daejeon 305-350 Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

3. Normally-off GaN-MISFET with well-controlled threshold voltage

4. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

5. High-performance E-mode AlGaN/GaN HEMTs

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