Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF4plasma treatment

Author:

Park Youngrak1,Kim Jungjin1,Chang Woojin1,Jung Dongyun1,Bae Sungbum1,Mun Jaekyung12,Jun Chi-Hoon1,Ko Sangchoon1,Nam Eunsoo1

Affiliation:

1. GaN Power Electronics Research Section; Electronics and Telecommunications Research Institute (ETRI); 218 Gajeong-ro Yuseong-gu Daejeon 305-700 Korea

2. Department of Advanced Device Engineering; University of Science and Technology; 217 Gajeong-ro Yuseong-gu Daejeon 305-350 Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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