Interface properties of OFETs based on an air-stable n-channel perylene tetracarboxylic diimide semiconductor-Reference-Cited by-同舟云学术

Interface properties of OFETs based on an air-stable n-channel perylene tetracarboxylic diimide semiconductor

Published:2011-12-27 Issue:3 Volume:209 Page:585-593
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lüttich Franziska,Lehmann Daniel,Friedrich Marion,Chen Zhihua,Facchetti Antonio,Borczyskowski Christian von,Zahn Dietrich R. T.,Graaf Harald

Funder

Edgar-Heinemann-Stiftung of the Chemnitz University of Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127592/fullpdf

Reference40 articles.

1. N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative

2. The electrical and dielectrical behavior of n-conducting perylene tetracarboxylic diimide derivatives

3. Influence of gas molecules on the charge carrier mobility in thin films of semiconducting perylene tetracarboxylic imides

4. High-Mobility Air-Stable n-Type Semiconductors with Processing Versatility: Dicyanoperylene-3,4:9,10-bis(dicarboximides)

5. High-Performance Solution-Deposited n-Channel Organic Transistors and their Complementary Circuits

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