A Comparative Study of GaN-Based Direct Current and Alternating Current High Voltage Light-Emitting Diodes-Reference-Cited by-同舟云学术

A Comparative Study of GaN-Based Direct Current and Alternating Current High Voltage Light-Emitting Diodes

Published:2018-01-29 Issue:10 Volume:215 Page:1700554
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhou Shengjun¹²,Gao Yilin¹,Zheng Chenju¹,Liu Yingce³,Hu Hongpo¹,Lv Jiajiang¹,Liu Xingtong¹

Affiliation:

1. Hubei Key Laboratory of Accoutrement Technique in Fluid Machinery and Power Engineering, School of Power and Mechanical Engineering, Wuhan University; Wuhan 430072 China

2. State Key Laboratory of Mechanical System and Vibration, School of Mechanical Engineering, Shanghai Jiao Tong University; Shanghai 200240 China

3. Xiamen Changelight Co., Ltd.; Xiamen 361000 China

Funder

National Natural Science Foundation of China

National High-tech R&D Program of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Junction temperature measurement of GaN-based light-emitting diodes using temperature-dependent resistance

2. Enhanced light output power of thin film GaN-based high voltage light-emitting diodes

3. High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm^2

4. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

5. High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

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