Laser‐Triggered Degradation of Silicon Circuits by Lithiation and Moisture Uptake for On‐Demand Transient Electronics

Abstract

Data security risks of unauthorized access of confidential information have attracted considerable attention. Transient electronics capable of physical disappearance or disintegration upon external stimuli could potentially offer an alternative solution at the device level. Despite great advances, smart, efficient, wireless, and nonrecoverable degradation of foundry‐compatible silicon (Si)‐integrated circuit (IC) chips remains a challenge. Herein, a laser‐triggered degradation of Si circuits by lithiation and moisture uptake is proposed. By integrating IC chips with a small amount of lithium sources and a fluidic reservoir consisting of hygroscopic materials, on‐demand, wireless, rapid, and complete degradation of Si IC chips built at 600 nm node is achieved upon activation by laser irradiation. This work paves a new route to accomplish smart, tether‐free, and thorough degradation of devices compatible with existing foundry processes, offering an essential baseline for the development of intelligent transient electronics for secured hardware.