From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit-Reference-Cited by-同舟云学术

From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit

Published:2021-01-19 Issue:5 Volume:34 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Osmanoglu Sinan¹²^ORCID,Ozbay Ekmel¹²

Affiliation:

1. Department of Electrical and Electronics Engineering I.D. Bilkent University Ankara Turkey

2. I.D. Bilkent University Nanotechnology Research Center (NANOTAM) Ankara Turkey

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2859

Reference26 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

3. Analyzing the AlGaN/AlN/GaN Heterostructures for HEMT Applications

4. Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD

5. Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHz

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1. An efficient extrinsic capacitances extraction method for small‐signal GaN HEMT devices;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-04-26

2. Guest editorial for the special issue on modeling of μmWave and mmWave electronic devices for wireless systems: Connecting technologies to applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-07-27

3. From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-01-19