Realistic model for the multiple-input floating-gate transistor-Reference-Cited by-同舟云学术

Realistic model for the multiple-input floating-gate transistor

Published:2014-09-02 Issue:6 Volume:9 Page:692-694
ISSN:1931-4973
Container-title:IEEJ Transactions on Electrical and Electronic Engineering
language:en
Short-container-title:IEEJ Trans Elec Electron Eng

Author:

Cisneros-Sinencio Luis Fortino¹,Diaz-Sanchez Alejandro²,Ramirez-Angulo Jaime³,Vazquez-Leal Hector¹

Affiliation:

1. Veracruzanian University; Cto. Universitario los Lagos s/n Xalapa, Ver 91000 Mexico

2. National Institute for Astrophysics, Optics and Electronics; Luis E. Erro No. 1 Tonantzintla, Pue 72840 Mexico

3. New Mexico State University; 1600 Steward Street Las Cruces NM 88003 USA

Publisher

Wiley

Subject

Electrical and Electronic Engineering

Reference8 articles.

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3. SPICE-compatible modelling technique for simulating floating-gate transistors;Rapp;IET Electronics Letters,2011

4. A floating-gate MOSFET D/A converter;Yin;Proceedings of the IEEE International Symposium on Circuits and Systems,1997

5. A practical floating-gate Muller-C element using vMOS threshold gates;Rodríguez-Villegas;IEEE Transactions on Circuits and Systems II,2001

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