High performance gate tunable solar blind ultraviolet phototransistors based on amorphous Ga 2 O 3 films grown by mist chemical vapor deposition
Author:
Affiliation:
1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of Microelectronics, Xidian University Xi'an 710071 China
Funder
National Natural Science Foundation of China
Publisher
Wiley
Subject
General Medicine
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/nano.202100029
Reference29 articles.
1. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%
2. Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer
3. Electroluminescence Transition From Visible- to Ultraviolet-Dominant Mode in $\hbox{n-Mn}_{0.04}\hbox{Zn}_{0.96}\hbox{O/i-ZnGa}_{2}\hbox{O}_{4}\hbox{/} \hbox{n-GaN}$ Structure With Highly Ultraviolet Detection Performance
4. Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
5. A $\beta$-${\rm Ga}_{2} {\rm O} _{3}$/GaN Hetero-Structured Solar-Blind and Visible-Blind Dual-Band Photodetector
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4. Memristor characteristics of a Ga–Al–O/Ga–Sn–O/Ga–Al–O stack device fabricated using mist chemical vapor deposition;Japanese Journal of Applied Physics;2024-06-03
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