Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil-Reference-Cited by-同舟云学术

Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil

Published:2012-09 Issue:9 Volume:20 Page:499-507
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Rockelé Maarten,Pham Duy-Vu¹,Steiger Jürgen¹,Botnaras Silviu¹,Weber Dennis¹,Vanfleteren Jan,Sterken Tom,Cuypers Dieter,Steudel Soeren²,Myny Kris,Schols Sarah²,van der Putten Bas³,Genoe Jan²,Heremans Paul

Affiliation:

1. Evonik Degussa GmbH; Paul-Baumann-Str. 1; 45772; Marl; Germany

2. IMEC; Kapeldreef 75; 3001; Leuven; Belgium

3. Holst Center; High Tech Campus 31; 5656; AE Eindhoven; The Netherlands

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Transparent ring oscillator based on indium gallium oxide thin-film transistors;Presley;Solid-State Electron.,2006

2. Toward high-performance amorphous GIZO TFTs;Barquinha;J. Electrochem. Soc.,2009

3. Review of recent developments in amorphous oxide semiconductor thin film transistor devices;Park;Thin Solid Films,2012