Design Theory of Junction Transistors
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering
Cited by 72 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Composition induced design considerations for InP/GaxIn1−xAs heterojunction bipolar transistors;Solid-State Electronics;2002-12
2. Transistor equivalent circuits;Proceedings of the IEEE;1998
3. Effects of quasi-ballistic base transport on the high-frequency characteristics of bipolar transistors;IEEE Transactions on Electron Devices;1997-04
4. Design considerations for wide-band p-i-n/HBT monolithic transimpedance optical receivers;Journal of Lightwave Technology;1993
5. An analysis of the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors;IEEE Transactions on Microwave Theory and Techniques;1992-03
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