High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD-Reference-Cited by-同舟云学术

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High-performance pMOSFETs with high Ge fraction strained SiGe-heterostructure channel and ultrashallow source/drain formed by selective B-doped SiGe CVD

Published:2008-11-30 Issue:3 Volume:165 Page:46-50
ISSN:0424-7760
Container-title:Electrical Engineering in Japan
language:en
Short-container-title:Elect. Eng. Jpn.

Author:

Takehiro Shinobu,Sakuraba Masao,Murota Junichi,Tsuchiya Toshiaki

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Reference10 articles.

1. Hole mobility enhancement in MOS-gated GexSi1−x/Si hetero-structure inversion layers;Garone;IEEE Electron Device Lett,1992

2. High-mobility modulation-doped SiGe-channel p-MOSFETs;Verdonckt-Vandebroek;IEEE Electron Device Lett,1991

3. A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100 nm strained silicon-on-insulator MOSFETs;Tezuka;Japan J Appl Phys,2001

4. Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−xGex CVD;Yamashiro;Mater Sci Eng B,2002

5. Fabrication of 0.12µm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD;Lee;Appl Surface Sci,2004

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