Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Green's function approach for modeling of electrostatic effects in nanoscale fully depleted double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Published:2013-08-19 Issue:1 Volume:27 Page:173-184
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Sharma Rajiv¹,Pandey Sujata²,Jain Shail Bala¹

Affiliation:

1. Department of Electronics and Communication Engineering; Guru Gobind Singh Indraprastha University; Delhi India

2. Amity University; Sector-125 Noida India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.1919/fullpdf

Reference18 articles.

1. The international technology roadmap for semiconductors 2001

2. A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and sub-threshold modeling;Klos;Solid State Electron,1996

3. Analytical description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs;Oh;IEEE Electron Device Lett,2000

4. MOSFET and frontend process integration: scaling trends, challenges and potential solutions through the end of the roadmap;Zeitzoff;Int J High Speed Electron Syst,2002

5. A physical short channel threshold voltage model for undoped symmetrical double-gate MOSFETs;Chen;IEEE Trans Electron Devices,2004

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New analytical models of subthreshold surface potential and subthreshold current of fully depleted short-channel silicon-on-insulator MOSFETs with halo or pocket implantation;Japanese Journal of Applied Physics;2014-05-01