Retention Secured Nonlinear and Self‐Rectifying Analog Charge Trap Memristor for Energy‐Efficient Neuromorphic Hardware-Reference-Cited by-同舟云学术

Retention Secured Nonlinear and Self‐Rectifying Analog Charge Trap Memristor for Energy‐Efficient Neuromorphic Hardware

Published:2022-11-27 Issue:3 Volume:10 Page:2205654
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Kim Geunyoung¹,Son Seoil¹,Song Hanchan¹,Jeon Jae Bum¹,Lee Jiyun²,Cheong Woon Hyung¹,Choi Shinhyun³,Kim Kyung Min¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

2. Semiconductor Research & Development (SRD) Samsung Electronics Hwaseong 18448 Republic of Korea

3. The School of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202205654

Reference45 articles.

1. The future of electronics based on memristive systems

2. Crossbar RRAM Arrays: Selector Device Requirements During Read Operation

3. Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

4. Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

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