Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS 2 /MoTe 2 Heterostructures-Reference-Cited by-同舟云学术

Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS 2 /MoTe 2 Heterostructures

Published:2021-03-15 Issue:11 Volume:8 Page:2100102
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Kim Jihoon¹,Venkatesan A.¹,Kim Hanul²,Kim Yewon¹,Whang Dongmok²³,Kim Gil‐Ho¹²^ORCID

Affiliation:

1. School of Electronic and Electrical Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

2. Samsung‐SKKU Graphene Centre Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

3. School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202100102

Reference37 articles.

1. Vertical and in-plane heterostructures from WS2/MoS2 monolayers

2. High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics

3. Interface Characterization and Control of 2D Materials and Heterostructures

4. Dual-Gated MoS2/WSe2 van der Waals Tunnel Diodes and Transistors

5. Field-Effect Transistors Based on Few-Layered α-MoTe2

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