Carrier Multiplication in Transition Metal Dichalcogenides Beyond Threshold Limit-Reference-Cited by-同舟云学术

Carrier Multiplication in Transition Metal Dichalcogenides Beyond Threshold Limit

Published:2022-09-07 Issue:31 Volume:9 Page:2203400
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Liu Yuxiang¹^ORCID,Frauenheim Thomas¹²³,Yam ChiYung⁴⁵

Affiliation:

1. Bremen Center for Computational Materials Science University of Bremen Am Fallturm 1 28359 Bremen Germany

2. Beijing Computational Science Research Center Haidian District Beijing 100193 China

3. Shenzhen JL Computational Science and Applied Research Institute Shenzhen 518109 China

4. Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen 518000 China

5. Hong Kong Quantum AI Lab Limited Hong Kong 0000 China

Funder

National Natural Science Foundation of China

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202203400

Reference45 articles.

1. Third Generation Photovoltaics based on Multiple Exciton Generation in Quantum Confined Semiconductors

2. Effect of Solar Concentration on the Thermodynamic Power Conversion Efficiency of Quantum-Dot Solar Cells Exhibiting Multiple Exciton Generation

3. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

4. Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion

5. New Aspects of Carrier Multiplication in Semiconductor Nanocrystals

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1. Efficient Carrier Multiplication in Self-Powered Near-Ultraviolet γ-InSe/Graphene Heterostructure Photodetector with External Quantum Efficiency Exceeding 161%;Nano Letters;2024-05-16

2. New Theoretical Model to Describe Carrier Multiplication in Semiconductors: Explanation of Disparate Efficiency in MoTe₂ versus PbS and PbSe;The Journal of Physical Chemistry C;2024-02-28

3. Efficient Multiple Exciton Generation in Monolayer MoS₂;The Journal of Physical Chemistry Letters;2023-03-20