New Theoretical Model to Describe Carrier Multiplication in Semiconductors: Explanation of Disparate Efficiency in MoTe<sub>2</sub> versus PbS and PbSe-Reference-Cited by-同舟云学术

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New Theoretical Model to Describe Carrier Multiplication in Semiconductors: Explanation of Disparate Efficiency in MoTe₂ versus PbS and PbSe

Published:2024-02-28 Issue:9 Volume:128 Page:3693-3702
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Weerdenburg Sven¹,Singh Nisha¹^ORCID,van der Laan Marco²^ORCID,Kinge Sachin³,Schall Peter²^ORCID,Siebbeles Laurens D. A.¹^ORCID

Affiliation:

1. Chemical Engineering Department, Delft University of Technology, Van der Maasweg 9, Delft 2629 HZ, The Netherlands

2. Institute of Physics, University of Amsterdam, Amsterdam 1098 XH, The Netherlands

3. Materials Research & Development, Toyota Motor Europe, Zaventem B1930, Belgium

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c00383

Reference55 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

2. Photovoltaic materials: Present efficiencies and future challenges

3. Emergence of new materials for exploiting highly efficient carrier multiplication in photovoltaics

4. Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals

5. Comparing Multiple Exciton Generation in Quantum Dots To Impact Ionization in Bulk Semiconductors: Implications for Enhancement of Solar Energy Conversion

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