Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing

Author:

Hwang Sungmin1,Yu Junsu2,Song Min Suk3,Hwang Hwiho3,Kim Hyungjin3ORCID

Affiliation:

1. Department of AI Semiconductor Engineering Korea University Sejong 30019 South Korea

2. Department of Electrical and Computer Engineering Seoul National University Seoul 08826 South Korea

3. Department of Electrical and Computer Engineering Inha University Incheon 22212 South Korea

Abstract

AbstractThe progress of artificial intelligence and the development of large‐scale neural networks have significantly increased computational costs and energy consumption. To address these challenges, researchers are exploring low‐power neural network implementation approaches and neuromorphic computing systems are being highlighted as potential candidates. Specifically, the development of high‐density and reliable synaptic devices, which are the key elements of neuromorphic systems, is of particular interest. In this study, an 8 × 16 memcapacitor crossbar array that combines the technological maturity of flash cells with the advantages of NAND flash array structure is presented. The analog properties of the array with high reliability are experimentally demonstrated, and vector‐matrix multiplication with extremely low error is successfully performed. Additionally, with the capability of weight fine‐tuning characteristics, a spiking neural network for CIFAR‐10 classification via off‐chip learning at the wafer level is implemented. These experimental results demonstrate a high level of accuracy of 92.11%, with less than a 1.13% difference compared to software‐based neural networks (93.24%).

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

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