Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure-Reference-Cited by-同舟云学术

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Published:2022-05-15 Issue:21 Volume:9 Page:2200566
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Baek Sungpyo¹,Yoo Hyun Ho¹,Ju Jae Hyeok¹,Sriboriboon Panithan²,Singh Prashant¹,Niu Jingjie¹,Park Jin‐Hong¹,Shin Changhwan³,Kim Yunseok²,Lee Sungjoo¹⁴^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 440‐746 Korea

2. School of Advanced Materials Science and Engineering Sungkyunkwan University (SKKU) Suwon 440‐746 Korea

3. School of Electrical Engineering Korea University Seoul 02841 Korea

4. Department of Nano Engineering Sungkyunkwan University Suwon 440‐746 Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202200566

Reference40 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Phase transitions in ferroelectric silicon doped hafnium oxide

3. Ferroelectric Memories

4. Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process‐Structure‐Property Relations

5. Progress and future prospects of negative capacitance electronics: A materials perspective

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