Multilevel Conductance States of Vapor‐Transport‐Deposited Sb2S3 Memristors Achieved via Electrical and Optical Modulation

Author:

Kundale Somnath S.12,Pawar Pravin S.3,Kumbhar Dhananjay D.4,Devara I. Ketut Gary1,Sharma Indu3,Patil Parag R.3,Lestari Windy Ayu1,Shim Soobin1,Park Jihye1,Dongale Tukaram D.4,Nam Sang Yong12,Heo Jaeyeong3,Park Jun Hong1ORCID

Affiliation:

1. Department of Materials Engineering and Convergence Technology Gyeongsang National University Jinju Gyeongsangnam‐do 52828 Republic of Korea

2. Research Institute for Green Energy Convergence Technology Gyeongsang National University Jinju 52828 Republic of Korea

3. Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center Chonnam National University Gwangju 61186 Republic of Korea

4. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology Shivaji University Kolhapur 416004 India

Abstract

AbstractThe pursuit of advanced brain‐inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (Sb2S3) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin‐film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of Sb2S3 thin films deposited via the vapor transport deposition technique. Experimental results indicate that the Ag/Sb2S3/Pt device possesses properties suitable for memory applications, including low operational voltages, robust endurance, and reliable switching behavior. Further, the reproducibility and stability of these properties across different device batches validate the reliability of these devices for practical implementation. Moreover, Sb2S3‐based memristors exhibit artificial neuroplasticity with prolonged stability, promising considerable advancements in neuromorphic computing. Leveraging the photosensitivity of Sb2S3 enables the Ag/Sb2S3/Pt device to exhibit significant low operating potential and conductivity modulation under optical stimulation for memory applications. This research highlights the potential applications of Sb2S3 in future memory devices and optoelectronics and in shaping electronics with versatility.

Funder

National Research Foundation of Korea

Publisher

Wiley

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