High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network-Reference-Cited by-同舟云学术

High On/Off Ratio Spintronic Multi‐Level Memory Unit for Deep Neural Network

Published:2022-02-20 Issue:13 Volume:9 Page:2103357
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Zhang Kun¹²^ORCID,Jia Xiaotao¹³,Cao Kaihua¹²,Wang Jinkai¹,Zhang Yue¹⁴^ORCID,Lin Kelian¹,Chen Lei¹,Feng Xueqiang¹,Zheng Zhenyi¹,Zhang Zhizhong¹,Zhang Youguang¹,Zhao Weisheng¹²⁴

Affiliation:

1. Fert Beijing Research Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 P. R. China

2. Beihang‐Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao 266101 P. R. China

3. Beihang Hangzhou Innovation Institute Yuhang Xixi Octagon City, Yuhang District Hangzhou 310023 P. R. China

4. Nanoelectronics Science and Technology Center Hefei Innovation Research Institute Beihang University Hefei 230013 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202103357

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