Defect Engineering: Synthesis and Electrochemical Properties of Two‐Dimensional Mo1.74CTz MXene

Abstract

The creation of vacancies and/or pores into two‐dimensional materials, like graphene and MXenes, has shown to increase their performance for sustainable applications. However, a simple and affordable method with controlled and tailorable vacancy concentration and/or pores size remains challenging. Herein, a simple and reproducible method is presented for controlled synthesis of Mo1.74CTz MXene with randomly distributed vacancies and pores, obtained from selective etching of both Ga and Cr in the Cr‐alloyed MAX‐phase like precursor Mo1.74Cr0.26Ga2C. Structural and compositional analysis of the 3D alloy show ≈13% Cr on the metal site, homogeneously distributed between different particles and within the atomic structure. After etching, it translates to Mo1.74CTz MXene, exhibiting defect‐rich sheets. Notably, the incorporation of Cr facilitates a shorter etching time with an improved yield compared to Mo2CTz. The Mo1.74CTz MXene displays excellent electrochemical properties, almost doubling the capacitance values (1152 F cm−3 and 297 F g−1 at 2 mV s−1 scan rate), compared to its pristine counterpart Mo2CTz. The presented method and obtained results suggest defect engineering of MXenes through precursor alloying as a pathway that can be generalized to other phases, to further improve their properties for various applications.