Long-lifetime photoconductivity in Cz n- and p-Si-Reference-Cited by-同舟云学术

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Long-lifetime photoconductivity in Cz n- and p-Si

Published:1989-12 Issue:12 Volume:24 Page:1295-1299
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Glinchuk K. D.,Litovchenko N. M.,Yu. Ptitsin V.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference6 articles.

1. : Proc. 14 Internat. Conf. Defects in Semicond., held at Paris, France, 1986. Ed. (Aldermannsdorf, Switzerland, 1986), v. I, p. 377

2. Effect of high oxygen doping on the minority carrier lifetime in heat-treated silicon crystals

3. A Variety of Oxygen-Induced Recombination Centres in 450 to 600 °C Heat-Treated Silicon

4. Optically induced long-lifetime photoconductivity in semi-insulating bulk GaAs

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