Effect of high oxygen doping on the minority carrier lifetime in heat-treated silicon crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference9 articles.
1. Annealing behaviour of oxygen-induced recombination centres in silicon
2. Silicon for electronic devices
3. Influence of oxygen on silicon resistivity
4. Decay of excess carriers in thermally treated oxygen-doped silicon
5. Effect of Heat Treatment on the Minority Carrier Lifetime in Oxygen-Containing Silicon
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1. Phosphorus gettering of iron by screen-printed emitters in monocrystalline Czochralski silicon wafers;Progress in Photovoltaics: Research and Applications;2012-03
2. An Enhancement Phenomenon of the Minority Carrier Lifetime in Annealed Silicon;physica status solidi (a);1990-08-16
3. Long-lifetime photoconductivity in Cz n- and p-Si;Crystal Research and Technology;1989-12
4. DLTS study of deep level defects in Cz n-Si due to heat treatment at 600 to 900 °C;Physica Status Solidi (a);1988-09-16
5. Deep levels in Cz-Si due to heat treatment at 600...900 °C;New Developments in Semiconductor Physics
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