Determination of P, B, and Al Concentrations in Si by Photoluminescence (PL)
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference16 articles.
1. Absorption due to Bound Excitons in Silicon
2. Exciton capture cross sections of indium and boron impurities in silicon
3. Absorption due to the creation of bound excitons in phosphorus-doped silicon
4. Impurity Analysis of Silicon Epitaxial Layers by the 4.2 K Photoluminescence Spectroscopy
5. Resistivity of Bulk Silicon and of Diffused Layers in Silicon
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence Properties of Epitaxial Layers on Highly Doped Silicon Substrates;Physica Status Solidi (a);1992-01-16
2. Quantitative Analysis of Shallow Impurities in Epitaxial Layers on Boron-Doped Silicon by Photoluminescence;Physica Status Solidi (a);1992-01-16
3. A New Attempt to Determine the Mutual Influence of Phosphorus and Boron in Photoluminescence Investigations of Silicon;Crystal Research and Technology;1992
4. Determination of the Free Exciton Capture Gross Sections of Boron and Phosphorus in Silicon by Photolummineseence;Physica Status Solidi (a);1991-06-16
5. Quantitative Analysis of Silicon Epitaxial Layers by Photoluminescence;Physica Status Solidi (a);1991-03-16
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