X-ray triple-crystal diffractometer investigation of arsenic implanted silicon after pulsed laser irradiation
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference15 articles.
1. Two-stage laser annealing of lattice disorder in phosphorus implanted silicon
2. X-ray and electron microscopy studies of arsenium implanted silicon crystals after a pulsed laser annealing
3. Diffuse Scattering from Defect Clusters near Bragg Reflections
4. X-ray rocking curves on inhomogeneous surface layers on Si single crystals
5. Separate measurements of dynamical and kinematical X-ray diffractions from silicon crystals with a triple crystal diffractometer
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation;physica status solidi (a);2005-05
2. Strain analysis and quantum well intermixing of a laterally modulated multiquantum well system produced by focused ion beam implantation;Journal of Physics D: Applied Physics;2001-05-03
3. Chapter 9 X-Ray Diffraction Techniques;Semiconductors and Semimetals;1997
4. On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry;physica status solidi (a);1985-09-16
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