X-ray rocking curves on inhomogeneous surface layers on Si single crystals
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/BF01596828.pdf
Reference23 articles.
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1. X-Ray Diffraction Patterns in High-Energy Proton Implanted Silicon;physica status solidi (a);1998-07
2. Analysis of structural defects in boron-implanted silicon single crystals on the basis of the results of double-and triple-crystal x-ray diffractometry;Technical Physics;1998-06
3. X-ray-diffractometry of structural changes occurring in surface layers of silicon in the process of laser diffusion of boron;Physics of the Solid State;1998-01
4. Comment on ‘Characterization of InxGa1 − xAs/InP epilayers by X-ray double crystal rocking curve peak profile analysis by Haiyan An, Ming Li, Shuren Yang, Zhenhong Mai, Shiyong Liu’ [J. Crystal Growth 148 (1995) 31];Journal of Crystal Growth;1997-08
5. Dynamical theory of X-ray diffraction from damaged epitaxial layers with constant strain gradient;Journal of Physics D: Applied Physics;1995-04-14
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