On the Nature of Radiation Defects Responsible for Fermi Level Pinning Effect in InP-Reference-Cited by-同舟云学术

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On the Nature of Radiation Defects Responsible for Fermi Level Pinning Effect in InP

Published:1991 Issue:6 Volume:26 Page:K129-K135
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Pyshnaya N. B.,Radatsan S. I.,Tiginyanu I. M.,Ursaki V. V.,Ursu V. A.,Aliev I. M.,Halilov H. A.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference11 articles.

1. Identification of the phosphor vacancy defect in electron irradiated p-type Inp

2. New Method for Treating Lattice Point Defects in Covalent Crystals

3. Radiation defects in electron-irradiated InP crystals

4. Proton bombardment in InP

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron annihilation investigations of vacancies in InP produced by electron irradiation at room temperature;Journal of Applied Physics;1997-04-15

2. A positron lifetime investigation of InP electron irradiated at 100 K;Journal of Applied Physics;1996-10

3. Achievements in Solid State Electronics in the Moldova Republic;NATO ASI Series;1995

4. Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers;Acta Physica Hungarica;1994-03

5. Quantitative study of the contribution of deep and shallow levels to the compensation mechanisms in annealed InP;Journal of Applied Physics;1993-11

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