Growth of GaAs Crystals by VGF at Different As Source Temperatures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference22 articles.
1. , , , : Gallium Arsenide and Related Compounds, 1985, Inst. Phys., Conf. Ser. 79: Chapter 1, p. 19
2. Effects of total liquid encapsulation on the characteristics of GaAs single crystals grown by the vertical gradient freeze technique
3. Undoped GaAs grown by the vertical gradient freeze method: growth and properties
4. Description of facet growth during VGF growth
5. Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique
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3. Dislocation patterning during crystal growth of semiconductor compounds (GaAs);Materials Science and Technology;2005-12
4. Bulk Semiconductors for Infrared Applications;Photodetectors and Fiber Optics;2001
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