Study of the Concentration Distribution of SiC Vapour in the Crystal Growth Zone-Reference-Cited by-同舟云学术

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Study of the Concentration Distribution of SiC Vapour in the Crystal Growth Zone

Published:1993 Issue:4 Volume:28 Page:495-501
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Lilov S. K.,Yanchev I. Y.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference8 articles.

1. Growth Studies of Silicon Carbide Crystals

2. (ed.): Theorie des echanges de chaleur et de masse, Mir, Moscou 1979

3. : Principles of Mass Transport, Moscow 1947

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vapor Transport Growth of Wide Bandgap Materials;Handbook of Crystal Growth;2015

2. A vacancy model of the heteropolytype epitaxy of SiC;Semiconductors;2005-03

3. Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum;Materials Science Forum;2004-06

4. A Simple Model for Calculating the Growth Rate of Epitaxial Layers of Silicon Carbide in Vacuum;Semiconductors;2004

5. Investigation of the role of the crystal growth zone during silicon carbide crystal growth by the sublimation method;Materials Science and Engineering: B;1994-11

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