Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum-Reference-Cited by-同舟云学术

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Simple Model for Calculation of SiC Epitaxial Layers Growth Rate in Vacuum

Published:2004-06 Issue: Volume:457-460 Page:249-252
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Davydov Sergey Y.¹,Savkina N.S.¹,Lebedev Alexander A.¹,Syväjärvi Mikael²,Yakimova Rositza²

Affiliation:

1. Russian Academy of Sciences

2. Linköping University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.457-460.249.pdf

Reference15 articles.

1. Yu.M. Tairov: SiC boule growth in Electric refractory materials ( Y.K. Kumashiro, M. Dekker, N.Y. 2000), p.409.

2. A.I. Zhmakin, Yu.N. Makarov, D.H. Ofengeim, M.S. Ramm: in Problems of mathematics physics and applied mathematics ( Ioffe Institute, Russian Academy of Science 2001), p.208 (in Russia).

3. M. Selder, L. Kadinsky, F. Durst in Problems of mathematics physics and applied mathematics (Ioffe Institute, Russian Academy of Science 2001), p.235 (in Russia).

4. K.F. Jensen. Handbook of crystal growth Vol. 3. (Elsevier 1994).

5. T. Kaneko. J. Crystal Growth 69, 1 (1984).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sublimation growth of an in-situ-deposited layer in SiC chemical vapor deposition on 4H-SiC(112¯0);Journal of Crystal Growth;2008-12

2. SiC HOMOEPITAXY AND HETEROEPITAXY;International Journal of High Speed Electronics and Systems;2005-12

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