Depth profile of the microhardness in helium implanted GaP
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference16 articles.
1. Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced γ-Spectroseopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique
2. Microhardness-damage density relationship in proton and helium implanted GaP single crystals
3. Microhardness of proton bombarded GaP single crystals
4. Swelling, Strain, and Radiation Damage of He+ Implanted GaP
5. The elastic properties of ion-implanted silicon
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3. Effect of irradiation on the microhardness of the LEC grown semi-insulating GaAs single crystals;Journal of Nuclear Materials;1995-08
4. Structural and mechanical properties of ion implanted GaAs and InP single crystals grown by the liquid encapsulated Czochralski technique;Materials Science and Engineering: B;1994-12
5. Surface hardening by proton irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-06
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