Effect of irradiation on the microhardness of the LEC grown semi-insulating GaAs single crystals-Reference-Cited by-同舟云学术

Effect of irradiation on the microhardness of the LEC grown semi-insulating GaAs single crystals

Published:1995-08 Issue: Volume:225 Page:314-317
ISSN:0022-3115
Container-title:Journal of Nuclear Materials
language:en
Short-container-title:Journal of Nuclear Materials

Author:

Udhayasankar M.,Arulkumaran S.,Arokiaraj J.,Santhanaraghavan P.,Sundarakannan B.,Kumar J.,Ramasamy P.,Nair K.G.M.,Magudapathy P.,Thampi N.S.,Krishan K.

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics

Reference22 articles.

1. Very High Speed Integrated Circuits;Kuzuhara,1990

2. The electrical characteristics of ion implanted compound semiconductors

3. Rapid thermal annealing effect on near‐surface stoichiometry of GaAs by heavy‐ion Rutherford backscattering

4. The effect of crystal defects on device performance and reliability

5. Depth profile of the microhardness in helium implanted GaP

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High energy ion implantation studies on GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07

2. The study of structural properties of 100 keV hydrogen ion implanted semi-insulating GaAs single crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-03

3. Liquid Encapsulated Czochralski Growth of Large size Gallium Arsenide and Indium Phosphide Single Crystals and their Characterisation—A Review;IETE Journal of Research;1997-03