Effective oxygen charge in SiO2 and its dependence on the bond angle of oxygen-Reference-Cited by-同舟云学术

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Effective oxygen charge in SiO2 and its dependence on the bond angle of oxygen

Published:1984 Issue:9 Volume:19 Page:1149-1166
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Geisser C. H.,Hübner K.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference67 articles.

1. : The Physics of SiO2 and its Interfaces (Ed. S. T. Pantelides), New York 1978, p. 65

2. Ab initio studies of the electronic properties of the silica surface

3. Electronic structure of defect centers in SiO2

4. Electronic energy-band structure of α quartz

5. , : The Physics of SiO2 and its Interfaces (Ed. S. T. Pantelides), New York 1978, p. 55

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular Quantum Mechanics in the Evaluation of Interactions of Less Localized Origin;Molecular Approach to Solids;1998

2. Radiation-induced chemical reaction of methane in the presence of silica-aluminas in relation to the catalytic activity of molecular sieves;International Journal of Radiation Applications and Instrumentation. Part C. Radiation Physics and Chemistry;1990-01

3. Structural phase transition in SiOx;Journal of Non-Crystalline Solids;1987-08

4. Quantum-chemical Approach to the Dependence of Oxygen Charge on Bond Angle in SiO2;Crystal Research and Technology;1986-03

5. Chemical Bonds in Silicates;Structural Chemistry of Silicates;1985

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