Quantum-chemical Approach to the Dependence of Oxygen Charge on Bond Angle in SiO2-Reference-Cited by-同舟云学术

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Quantum-chemical Approach to the Dependence of Oxygen Charge on Bond Angle in SiO2

Published:1986-03 Issue:3 Volume:21 Page:353-360
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Pietsch U.,Hübner K.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference16 articles.

1. Bethe-Lattice Approach to the Electronic Structure of Intrinsic Defects in v-SiO2

2. Cluster-Bethe-Lattice Approach to the Electronic Structure of a Twofold Coordinated Silicon Atom as a New Intrinsic Defect in v-SiO2

3. Theory of amorphous SiO2andSiOx. II. Electron states in an intrinsic glass

4. : Valence, Oxford 1961

5. : Thesis, Wilhelm Pieck University, Rostock 1985

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. H6Si2O7: Ab initio molecular orbital calculations show two geometric conformations;Geochimica et Cosmochimica Acta;1991-11

2. Structural phase transition in SiOx;Journal of Non-Crystalline Solids;1987-08

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