Compact modeling of silicon nanowire MOSFET for radio frequency applications

Author:

Cho Seongjae,Kim Kyung Rok,Park Byung-Gook,Kang In Man

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. Novel gate-all-around metal-oxide-semiconductor field effect transistors with self-aligned structure;Song;Jpn J Appl Phys,2007

2. NANOCAD Framework for simulation of quantum effects in nanoscale MOSFET devices;Jin;J Semiconductor Techn Sci,2006

3. Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs;Kang;IEEE Trans Nanotechnol,2006

4. M. Je H. Shin Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance 2003 247 250

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