Author:
Cho Seongjae,Kim Kyung Rok,Park Byung-Gook,Kang In Man
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. Novel gate-all-around metal-oxide-semiconductor field effect transistors with self-aligned structure;Song;Jpn J Appl Phys,2007
2. NANOCAD Framework for simulation of quantum effects in nanoscale MOSFET devices;Jin;J Semiconductor Techn Sci,2006
3. Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs;Kang;IEEE Trans Nanotechnol,2006
4. M. Je H. Shin Accurate four-terminal RF MOSFET model accounting for the short-channel effect in the source-to-drain capacitance 2003 247 250
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献