A 23‐31 GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power-Reference-Cited by-同舟云学术

A 23‐31 GHz gallium nitride high‐robustness low‐noise amplifier with 1.1‐dB noise figure and 28‐dBm saturation output power

Published:2019-11-06 Issue:3 Volume:62 Page:1077-1081
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw Opt Technol Lett

Author:

Zheng Penghui¹²,Zhang Shiyong¹²,Xu Jianxing¹²,Wang Rong¹²,Tong Xiaodong¹²^ORCID

Affiliation:

1. Microsystem and Terahertz Research CenterChina Academy of Engineering Physics Chengdu China

2. Institute of Electronic EngineeringChina Academy of Engineering Physics Mianyang China

Funder

Science Challenge Project

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/mop.32130

Reference15 articles.

1. RudolphM BehtashR HircheK et al. A highly survivable 3–7 GHz GaN low‐noise amplifier. Paper presented at: 2006 IEEE MTT‐S International Microwave Symposium Digest. San Francisco CA USA 2006.

2. HeyingB LuoW B SmorchkovaI et al. Reliable GaN HEMTS for high frequency applications. Paper presented at: 2010 IEEE MTT‐S International Microwave Symposium. Anaheim CA USA 2010.

3. RescaD ScappavivaF FlorianC et al. A robust Ku‐band low noise amplifier using an industrial 0.25‐μm AlGaN/GaN on SiC process. Paper presented at: 2013 European Microwave Conference. Nuremberg Germany 2013.

4. YamakiF InoueK NishiM et al. Ruggedness and reliability of GaN HEMT. Paper presented at: European Microwave Integrated Circuit Conference. Manchester UK 2011.

5. AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

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