AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates
2. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
3. Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride
4. Growth and characteristics of Fe-doped GaN
5. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
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