On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (II). Contrast due to defects-Reference-Cited by-同舟云学术

On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (II). Contrast due to defects

Published:1980 Issue:5 Volume:15 Page:575-584
ISSN:0023-4753
Container-title:Kristall und Technik
language:en
Short-container-title:Krist. Techn.

Author:

Kittler M.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference11 articles.

1. Contrast and resolution of SEM charge‐collection images of dislocations

2. Observation of dislocations in a silicon phototransistor by scanning electron microscopy using the barrier electron voltaic effect

3. SEM observation and contrast mechanism of stacking faults in an epitaxial silicon layer

4. The electrical properties of stacking faults and precipitates in heat‐treated dislocation‐free Czochralski silicon

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