Multiple-angle ellipsometric study of the interfacial layer in Si?SiO2 structures
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. and J. Appl. Phys. in press.
2. and Ellipsometry and Polarized Light, North-Holland, Amsterdam (1977).
3. Multiple angle of incidence ellipsometric analysis of non-absorbing two-layer and three-layer systems
4. Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
5. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
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1. Study of thin SiO2 and its interface formed by thermal oxidation of rf hydrogen plasma-cleaned silicon;Vacuum;2001-05
2. Ellipsometric approach for determination of the pseudodielectric function of the Si–interface in the Si–SiO2 structure;Surface Science;1999-12
3. Spectroscopic ellipsometry characterization of strained interface region in thermally oxidized Si(111);Thin Solid Films;1999-04
4. Ellipsometric approach for evaluation of optical parameters in thin multilayer structures;Surface and Interface Analysis;1993-04
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