Characteristics ofa-IZO TFTs with high-κ HfSiOxgate insulator annealed in various conditions-Reference-Cited by-同舟云学术

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Characteristics ofa-IZO TFTs with high-κ HfSiOxgate insulator annealed in various conditions

Published:2015-08 Issue:8 Volume:23 Page:384-390
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:Jnl Soc Info Display

Author:

Lim Yoo Seong¹,Im Yong Jin¹,Ha Seung Soo²,Park Chan Hee¹,Jang Min Hyung¹,Choi Seung-il²,Park Ji-in¹,Yi Moonsuk¹

Affiliation:

1. Department of Electronics Engineering; Pusan National University; Busan Korea

2. Department of Advanced Integrated Circuit; Pusan National University; Busan Korea

Funder

BK21PLUS

Creative Human Resource Development Program for IT Convergence

Pusan National University

Ministry of Education, Science and Technology - South Korea

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. First-principles study on doping and phase stability of HfO2;Lee;Physical Review B,2008

2. High-κ gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys. Lett.,2001

3. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition;Frank;Appl. Phys. Lett.,2005

4. High-mobility amorphous In2O3-10 wt% ZnO thin film transistors;Yaglioglu;Appl. Phys. Lett.,2006

5. Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film;Jung;Thin Solid Films,2003

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the spin-on-glass curing atmosphere on In–Ga–Zn–O thin-film transistors;Journal of Information Display;2020-01-07

2. Hf-Based High-κ Dielectrics: A Review;Acta Physica Polonica A;2019-12

3. Improved Electrical Performance of SiO2-Doped Indium Zinc Oxide Thin-Film Transistor;Journal of Nanoscience and Nanotechnology;2019-03-01

4. Stability study of indium tungsten oxide thin-film transistors annealed under various ambient conditions;physica status solidi (a);2016-12-22

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