Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing-Reference-Cited by-同舟云学术

Cause analysis of the faults in HARC etching processes by using the PI‐VM model for OLED display manufacturing

Published:2019-06-27 Issue:9 Volume:16 Page:1900030
ISSN:1612-8850
Container-title:Plasma Processes and Polymers
language:en
Short-container-title:Plasma Process Polym

Author:

Park Seolhye¹^ORCID,Kyung Yunyoung¹,Lee Juyoung¹,Jang Yongsuk¹,Cha Taewon¹,Noh Yeongil¹,Choi Younghoon¹,Kim Byungsoo¹,Cho Taeyoung¹,Seo Rabul¹,Yang Jae‐Ho¹,Jang Yunchang²,Ryu Sangwon²,Kim Gon‐Ho²

Affiliation:

1. Mobile Display Dry & Doping Technology TeamSamsung Display Co., Ltd Chungcheongnam‐do Korea

2. Department of Nuclear EngineeringSeoul National University Seoul Korea

Publisher

Wiley

Subject

Polymers and Plastics,Condensed Matter Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/ppap.201900030

Reference24 articles.

1. A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and Si

2. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

3. Plasma chemistry in fluorocarbon film deposition from pentafluoroethane/argon mixtures

4. Resolving critical dimension drift over time in plasma etching through virtual metrology based wafer-to-wafer control

5. On the effect of the electron energy distribution on the plasma parameters of an argon discharge: a global (volume-averaged) model study

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